Project Description
Customized plasma etching system for process development
Construction and commissioning of an RF plasma etching system with supporting ion source. The system serves as a prototype for demonstrating the feasibility of combining deposition and removal of DLC layers. In a first step an etching function based on RF, supported by an additional ion source, is implemented and tested. In a later step, the system is to be expanded with a sputter source and further components. This enables the deposition of DLC layers.
Requirements
Chamber and components were brought in by the customer
Modifications
Design and construction of the system
Design and integration of prototype ion source (ionitron)
System control by ATLAS
Commissioning