Project Description
Customized plasma etching system for process development
Construction and commissioning of an RF plasma etching system with supporting ion source. The system serves as a prototype for demonstrating the feasibility of combining deposition and removal of DLC layers. In a first step an etching function based on RF, supported by an additional ion source, is implemented and tested. In a later step, the system is to be expanded with a sputter source and further components. This enables the deposition of DLC layers.
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Requirements
Chamber and components were brought in by the customer
Modifications
Design and construction of the system
Design and integration of prototype ion source (ionitron)
System control by ATLAS
Commissioning