Project Description

Customized plasma etching system for process development

Construction and commissioning of an RF plasma etching system with supporting ion source. The system serves as a prototype for demonstrating the feasibility of combining deposition and removal of DLC layers. In a first step an etching function based on RF, supported by an additional ion source, is implemented and tested. In a later step, the system is to be expanded with a sputter source and further components. This enables the deposition of DLC layers.

Requirements

  • Chamber and components were brought in by the customer

Modifications

  • Design and construction of the system

  • Design and integration of prototype ion source (ionitron)

  • System control by ATLAS

  • Commissioning